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NSVMUN5213DW1T3G

Name: onsemi NSVMUN5213DW1T3G
Brand: onsemi
SKU: 863-NSVMUN5213DW1T3G
Price: 0.2 GBP
Availability: InStock

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See Product Specifications

Mouser No:

863-NSVMUN5213DW1T3G

Mfr. No:

NSVMUN5213DW1T3G

Mfr.:

onsemi

Description:

Digital Transistors SS SC88 BR XSTR NPN 50V

Datasheet:

NSVMUN5213DW1T3G Datasheet

ECAD Model:

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More Information

Learn more about onsemi NSVMUN5213DW1T3G

In Stock: 6,473

Stock:: 6,473

Can Dispatch Immediately

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On Order:: 10,000

Expected 18/09/2026
Factory Lead Time:: 29

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

£-.--

Ext. Price:

£-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 10000)

Cut Tape

MouseReel™ (+£3.50)

Pricing (GBP)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	£0.203	£0.20
	£0.124	£1.24
	£0.078	£7.80
	£0.057	£28.50
	£0.045	£45.00
	£0.039	£195.00
Full Reel (Order in multiples of 10000)
	£0.035	£350.00

† A MouseReel™ fee of £3.50 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	Digital Transistors
RoHS:
Configuration:	Dual
Transistor Polarity:	NPN
Typical Input Resistor:	47 kOhms
Typical Resistor Ratio:	1
Mounting Style:	SMD/SMT
Package/Case:	SOT-363-6
DC Collector/Base Gain hFE Min:	80
Collector- Emitter Voltage VCEO Max:	50 V
Continuous Collector Current:	100 mA
Pd - Power Dissipation:	250 mW
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	MUN5213DW1
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Country of Assembly:	CN
Country of Diffusion:	MY
Country of Origin:	CN
Operating Temperature Range:	- 55 C to + 150 C
Product Type:	Digital Transistors
Qualification:	AEC-Q101
Factory Pack Quantity:	10000
Subcategory:	Transistors
Unit Weight:	6.200 mg

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Datasheet

NSVMUN5213DW1T3G Datasheet

PCN

CNHTS:: 8542399000
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
KRHTS:: 8541299000
TARIC:: 8541210000
MXHTS:: 8541210100
ECCN:: EAR99

Dual NPN Bipolar Digital Transistors

onsemi Dual NPN Bipolar Digital Transistors are designed to replace a single device and the additional external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors (a series base resistor and a base-emitter resistor). By integrating these individual components into a single device, the BRT on these onsemi NPN Bipolar Digital Transistors simplifies circuit design and eliminates them. A BRT also reduces system cost and board space.