GP2T040A120J

SemiQ
148-GP2T040A120J
GP2T040A120J

Mfr.:

Description:
SiC MOSFETs 1200V, 40mOhm, TO-263-7L MOSFET

Datasheet:
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In Stock: 25

Stock:
25 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:

Pricing (GBP)

Qty. Unit Price
Ext. Price
£8.86 £8.86
£6.93 £69.30
£5.76 £576.00
£5.14 £2,570.00
£4.37 £4,370.00

Product Attribute Attribute Value Select Attribute
SemiQ
Product Category: SiC MOSFETs
RoHS:  
REACH - SVHC:
SMD/SMT
TO-263-7
N-Channel
1 Channel
1.2 kV
66 A
38 mOhms
- 10 V, + 25 V
4 V
112 nC
- 55 C
+ 175 C
357 W
Enhancement
Brand: SemiQ
Configuration: Single
Fall Time: 12 ns
Forward Transconductance - Min: 16 S
Packaging: Tube
Product Type: SiC MOSFETS
Rise Time: 5 ns
Series: GP2T020A120
Factory Pack Quantity: 50
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 28 ns
Typical Turn-On Delay Time: 14 ns
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Attributes selected: 0

Datasheet

USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

GP2T040A120x SiC MOSFETs

SemiQ GP2T040A120x SiC MOSFETs benefit many applications, including Power Factor Correction, DC-DC Converter Primary Switching, and Synchronous rectification. The GP2T040A120x when combined with Silicon Carbide Schottky diodes offers optimal performance that can be achieved without the trade-offs made with Silicon devices. EV Charging, Solar/Wind, Industrial Controls, and HVAC systems benefit from the increased performance achieved with SemiQ SiC MOSFETs.

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