GE12MPS06A

GeneSiC Semiconductor
905-GE12MPS06A
GE12MPS06A

Mfr.:

Description:
SiC Schottky Diodes 650V 12A TO-220-2 SiC Schottky MPS

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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In Stock: 2,951

Stock:
2,951 Can Dispatch Immediately
Factory Lead Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:

Pricing (GBP)

Qty. Unit Price
Ext. Price
£1.66 £1.66

Product Attribute Attribute Value Select Attribute
Navitas Semiconductor
Product Category: SiC Schottky Diodes
RoHS:  
SMD/SMT
TO-220-2
Single
12 A
650 V
SiC Schottky MPS
Tube
Brand: GeneSiC Semiconductor
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 50
Subcategory: Diodes & Rectifiers
Vr - Reverse Voltage: 650 V
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Attributes selected: 0

Datasheet

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CAHTS:
8541100090
USHTS:
8541100080
TARIC:
8541100000
ECCN:
EAR99

650V, 1200V, & 1700V SiC Schottky MPS™ Diodes

GeneSiC Semiconductor 650V, 1200V, and 1700V SiC Schottky MPS™ Diodes provide low standby power losses and improved circuit efficiency. The 650V SiC Diodes have a forward current range of 6A to 20A. The 1200V SiC Diodes have a forward current range of 1A to 200A. The 1700V SiC Diodes have a forward current range of 5A to 50A. 

650V SiC Schottky MPS™ Diodes

GeneSiC Semiconductor 650V SiC Schottky MPS™ Diodes combine excellent forward and switching characteristics with best-in-class surge current robustness and thermal conductivity. These diodes operate at 175°C maximum operating temperature and show temperature-independent switching behavior. The 650V SiC Schottky diodes feature superior Avalanche (UIS) capability and low device capacitance. One key advantage of these diodes is the ease of paralleling devices without thermal runaway. Typical applications include SMPS, EVs, motor drives, LED and HID lighting, medical imaging systems, high voltage sensing, induction heating and welding, and pulsed power.

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