It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

GCMX080A120B2H1P

Name: SemiQ GCMX080A120B2H1P
Brand: SemiQ
SKU: 148-GCMX080A120B2H1P
Price: 31.2 GBP
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

148-GCMX080A120B2H1P

Mfr. No:

GCMX080A120B2H1P

Mfr.:

SemiQ

Description:

MOSFET Modules SiC 1200V 80mohm MOSFET Full-Bridge Module

Datasheet:

GCMX080A120B2H1P Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about SemiQ GCMX080A120B2H1P

In Stock: 35

Stock:: 35 Can Dispatch Immediately

An unexpected error occurred. Please try again later.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

£-.--

Ext. Price:

£-.--

Est. Tariff:

Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£31.20	£31.20
	£26.34	£263.40
	£26.33	£2,633.00
Full Reel (Order in multiples of 40)
	£26.34	£1,053.60

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SemiQ
Product Category:	MOSFET Modules
RoHS:
REACH - SVHC:
Technology:	SiC
Mounting Style:	Press Fit
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	27 A
Rds On - Drain-Source Resistance:	77 mOhms
Vgs - Gate-Source Voltage:	- 5 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	1.8 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	119 W
Series:	GCMX
Packaging:	Reel
Packaging:	Cut Tape
Brand:	SemiQ
Fall Time:	4 ns
Product Type:	MOSFET Modules
Rise Time:	3 ns
Factory Pack Quantity:	40
Subcategory:	Discrete and Power Modules
Type:	Full Bridge
Typical Turn-Off Delay Time:	18 ns
Typical Turn-On Delay Time:	10 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

GCMX080A120B2H1P Datasheet (PDF)

CNHTS:: 8504409100
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

GCMX 1200V SiC MOSFET Full-Bridge Modules

SemiQ GCMX 1200V SiC MOSFET Full-Bridge Modules offer low switching losses, low junction-to-case thermal resistance and very rugged and easy mounting. These modules directly mount the heatsink (isolated package) and include a Kelvin reference for stable operation. All parts have been rigorously tested to withstand voltages above 1350V. The hallmark characteristic of these modules is the robust 1200V drain-source voltage. The GCMX full-bridge modules operate at a 175°C junction temperature and are RoHS-compliant. Typical applications include photovoltaic inverters, battery chargers, energy storage systems and high-voltage DC-to-DC converters.