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DMN53D0LQ-13

Name: Diodes Incorporated DMN53D0LQ-13
Brand: Diodes Incorporated
SKU: 621-DMN53D0LQ-13
Price: 0.21 GBP
Availability: InStock

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Mouser No:

621-DMN53D0LQ-13

Mfr. No:

DMN53D0LQ-13

Mfr.:

Diodes Incorporated

Description:

MOSFETs 2N7002 Family

Datasheet:

DMN53D0LQ-13 Datasheet (PDF)

ECAD Model:

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Learn more about Diodes Incorporated DMN53D0LQ-13

In Stock: 14,607

Stock:: 14,607

Can Dispatch Immediately

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On Order:: 20,000

Expected 05/06/2026
Factory Lead Time:: 24

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

£-.--

Ext. Price:

£-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 10000)

Cut Tape

MouseReel™ (+£3.50)

Pricing (GBP)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	£0.217	£0.22
	£0.135	£1.35
	£0.085	£8.50
	£0.062	£31.00
	£0.05	£50.00
	£0.043	£215.00
Full Reel (Order in multiples of 10000)
	£0.038	£380.00
	£0.031	£620.00

† A MouseReel™ fee of £3.50 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

DMN53D0LQ-7

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

£0.22

Min:

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-23-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	50 V
Id - Continuous Drain Current:	500 mA
Rds On - Drain-Source Resistance:	1.6 Ohms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	800 mV
Qg - Gate Charge:	600 pC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	540 mW
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Diodes Incorporated
Configuration:	Single
Fall Time:	11 ns
Product Type:	MOSFETs
Rise Time:	2.5 ns
Series:	DMN53
Factory Pack Quantity:	10000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	19 ns
Typical Turn-On Delay Time:	2.7 ns
Unit Weight:	8 mg

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Filter Document:

Datasheet

DMN53D0LQ-13 Datasheet (PDF)

PCN

Environmental Compliance (PDF)

CNHTS:: 8541210000
CAHTS:: 8541290000
USHTS:: 8541210095
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

DMN53xx N-Channel Enhancement Mode MOSFETs

Diodes Incorporated DMN53xx N-Channel Enhancement Mode MOSFETs are designed to minimize the on-state resistance RDS(ON) while maintaining superior switching performance. ESD protected to 2KV, these new generation MOSFETs feature low on-resistance, very low gate threshold voltage, low input capacitance, fast switching speeds, and low input/output leakage. Qualified to AEC-Q101 Standards for High Reliability, DMN53xx N-Channel Enhancement Mode MOSFETs are ideal for high-efficiency power management applications.

DMNxx MOSFETs

Diodes Inc. DMNxx MOSFETs are N-channel devices ideally suited for meeting the requirements of a variety of power management applications. DMNxx MOSFETs offer a variety of package options and a wide range of drain-source voltage values.

Power MOSFETs

Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.