DMN2990UFZ-7B

Diodes Incorporated
621-DMN2990UFZ-7B
DMN2990UFZ-7B

Mfr.:

Description:
MOSFETs 20V N-Ch Enh FET Dual .25A .32W 389pF

ECAD Model:
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In Stock: 12,417

Stock:
12,417 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 10000)

Pricing (GBP)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
£0.361 £0.36
£0.22 £2.20
£0.14 £14.00
£0.105 £52.50
£0.084 £84.00
£0.073 £365.00
Full Reel (Order in multiples of 10000)
£0.069 £690.00
£0.064 £1,280.00
† A MouseReel™ fee of £3.50 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Diodes Incorporated
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
X2-DFN0606-3
N-Channel
1 Channel
20 V
250 mA
990 mOhms
- 8 V, 8 V
1 V
1 nC
- 55 C
+ 150 C
320 mW
Enhancement
Reel
Cut Tape
MouseReel
Brand: Diodes Incorporated
Configuration: Single
Fall Time: 7.7 ns
Forward Transconductance - Min: 180 mS
Product Type: MOSFETs
Rise Time: 2.1 ns
Series: DMN2990
Factory Pack Quantity: 10000
Subcategory: Transistors
Transistor Type: 2 N-Channel
Typical Turn-Off Delay Time: 22 ns
Typical Turn-On Delay Time: 3.5 ns
Unit Weight: 1 mg
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Attributes selected: 0

CNHTS:
8541210000
CAHTS:
8541210000
USHTS:
8541210095
JPHTS:
854121000
KRHTS:
8541219000
TARIC:
8541210000
MXHTS:
8541210100
ECCN:
EAR99

Power MOSFETs

Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

DMxx Miniature Enhancement Mode MOSFETs

Diode Inc. DMxx Miniature Enhancement Mode MOSFETs are designed to minimize on-state resistance (RDS(ON)). They maintain superior switching performance, making them ideal for high-efficiency power management applications. The DMN31D5UFZ and DMN2990UFZ are N-Channel enhancement mode MOSFETs and the DMP32D9UFZ is a P-Channel Enhancement Mode MOSFET.