BSM450D12P4G102

ROHM Semiconductor
755-BSM450D12P4G102
BSM450D12P4G102

Mfr.:

Description:
MOSFET Modules 1200V, 447A, Half bridge, Full SiC-Power Module with Trench MOSFET

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 4

Stock:
4 Can Dispatch Immediately
Factory Lead Time:
27 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:
This Product Ships FREE

Pricing (GBP)

Qty. Unit Price
Ext. Price
£578.43 £578.43
£503.70 £6,044.40

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: MOSFET Modules
RoHS:  
SiC
Screw Mount
Module
N-Channel
2 Channel
1.2 kV
447 A
- 4 V, + 21 V
4.8 V
- 40 C
+ 150 C
1.45 kW
Bulk
Brand: ROHM Semiconductor
Configuration: Dual
Fall Time: 90 ns
Length: 152 mm
Product Type: MOSFET Modules
Rise Time: 80 ns
Factory Pack Quantity: 4
Subcategory: Discrete and Power Modules
Type: SiC Power Module
Typical Turn-Off Delay Time: 430 ns
Typical Turn-On Delay Time: 100 ns
Width: 62 mm
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

This functionality requires JavaScript to be enabled.

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

SiC Power Modules

ROHM Semiconductor SiC power modules are half-bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These ROHM modules support high-frequency operation through reduced switching loss. The optimized design reduces stray inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.