2ED020I12-FI

Infineon Technologies
641-2ED020I12-FI
2ED020I12-FI

Mfr.:

Description:
Gate Drivers ISOLATED DRIVER

Datasheet:
ECAD Model:
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In Stock: 12,694

Stock:
12,694 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1000)

Pricing (GBP)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
£4.10 £4.10
£2.82 £28.20
£2.62 £65.50
£2.30 £230.00
£2.18 £545.00
£1.96 £980.00
Full Reel (Order in multiples of 1000)
£1.65 £1,650.00
£1.60 £3,200.00
† A MouseReel™ fee of £3.50 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: Gate Drivers
RoHS:  
IGBT, MOSFET Gate Drivers
High-Side
SMD/SMT
DSO-18
2 Driver
2 Output
1 A
14 V
18 V
Inverting, Non-Inverting
20 ns
20 ns
- 40 C
+ 150 C
2ED-FI Enhanced
Reel
Cut Tape
MouseReel
Brand: Infineon Technologies
Logic Type: CMOS, TTL
Moisture Sensitive: Yes
Operating Supply Current: 3.9 mA
Output Voltage: 1.7 V
Pd - Power Dissipation: 1.4 W
Product Type: Gate Drivers
Propagation Delay - Max: 130 ns
Shutdown: Yes
Factory Pack Quantity: 1000
Subcategory: PMIC - Power Management ICs
Technology: Si
Tradename: EiceDRIVER
Part # Aliases: SP000265782 2ED020I12FIXUMA1
Unit Weight: 530 mg
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Attributes selected: 0

Datasheet

Product Catalogs

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CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542310075
JPHTS:
8542390990
TARIC:
8542399000
MXHTS:
85423999
ECCN:
EAR99

EiceDRIVER™ Enhanced Isolated Gate Driver ICs

Infineon Technologies EiceDRIVER™ Enhanced Isolated Gate Driver ICs offer protection features such as DESAT, miller clamp, soft-off for MOSFETs, IGBTs, and SiC MOSFETs. These isolated drivers are based on our Coreless Transformer (CT) technology, enabling a world class Common Mode Transient Immunity (CMTI) of 300kV/μs. The miller clamp and accurate short-circuit protection (DESAT) enables superior application safety by avoiding parasitic turn-on and short-circuit when driving CoolSiC™ SiC MOSFET and TRENCHSTOP™ IGBT7. The EiceDRIVER™isolated drivers provide driving capabilities of up to 9A, making booster solutions obsolete. These single-channel and dual-channel gate driver ICs are available as X3 analog family (1ED34xx) and X3 digital family gate driver ICs. The 1ED34xx and 1ED38xx gate driver ICs offer 9A output current and 40Vmax output voltage in a space-saving DS0-16 fine pitch wide-body package with 8mm creepage. These ICs features short-circuit clamping and active shutdown and offer the highest isolation capability for the 1500V DC solar inverter application.

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.

EiceDRIVER™ Isolated & Non-Isolated Gate Drivers

Infineon EiceDRIVER™ Isolated and Non-Isolated Gate Drivers provide optimized low- and high-voltage gate driver solutions for MOSFETs, IGBTs, and IGBT modules. These isolated and non-isolated gate driver ICs are designed to build reliable and efficient applications. An optimum gate drive configuration is essential for all power switches, whether they are in discrete form or in a power module. Infineon gate drivers provide a wide range of typical output current options, from 0.1A up to 10A, suitable for any power device size.

Isolated Gate Drivers

Infineon Isolated Gate Drivers use magnetically coupled coreless transformer (CT) technology to transfer signals across galvanic isolation. These drivers offer functional basic, reinforced isolated, UL 1577, and VDE 0884 certified products. The isolation allows for very large voltage swings (e.g. ±1200V). These isolated drivers incorporate the most important key features and parameters for MOSFET, IGBT, IGBT modules, SiC MOSFET, and GaN HEMT driving.

Half-Bridge Gate Driver ICs

Infineon Technologies Half-Bridge Gate Driver ICs are based on level-shifter Silicon On Insulator (SOI) technology. This technology integrates a low-ohmic ultrafast bootstrap diode and supports higher efficiency and smaller form factors of applications.

Fast DC EV Charging Solutions

Infineon Technologies Fast DC Electric Vehicle (EV) Charging Solutions address the needs for e-mobility. With the ever-growing number of electric vehicles on the market and pressure from governments to reduce vehicle emissions to zero by 2050, there is a great need for more efficient charging solutions. As various consumer studies show, the acceptance of electromobility depends largely on the availability and duration of the charging process. High-power DC charging stations are the answer to these market requirements. Today, a typical electric vehicle can charge about 80% of its battery capacity in less than 10 minutes. This is comparable to refueling a conventional car with an internal combustion engine. Infineon helps bring energy-efficient DC fast-charging designs to life. Benefit from a comprehensive, ready-to-implement one-stop product and design portfolio that covers the entire product range from power conversion, microcontrollers, security, auxiliary power supply, and communication.

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

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