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NSVT807CMTWFTBG

Name: onsemi NSVT807CMTWFTBG
Brand: onsemi
SKU: 863-NSVT807CMTWFTBG
Price: 0.4 GBP
Availability: InStock

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See Product Specifications

Mouser No:

863-NSVT807CMTWFTBG

Mfr. No:

NSVT807CMTWFTBG

Mfr.:

onsemi

Description:

Bipolar Transistors - BJT GENERAL PURPOSE TRANSISTOR PNP, 45 V, 500 MA

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

NSVT807CMTWFTBG Datasheet

ECAD Model:

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More Information

Learn more about onsemi NSVT807CMTWFTBG

In Stock: 9

Stock:: 9

Can Dispatch Immediately

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On Order:: 6,000

Expected 04/05/2026
Factory Lead Time:: 38

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

£-.--

Ext. Price:

£-.--

Est. Tariff:

Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£0.405	£0.41
	£0.249	£2.49
	£0.163	£16.30
	£0.12	£60.00
	£0.109	£109.00
Full Reel (Order in multiples of 3000)
	£0.093	£279.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	Bipolar Transistors - BJT
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	XDFNW-3
Transistor Polarity:	PNP
Configuration:	Single
Maximum DC Collector Current:	1 A
Collector- Emitter Voltage VCEO Max:	45 V
Collector- Base Voltage VCBO:	45 V
Emitter- Base Voltage VEBO:	5 V
Collector-Emitter Saturation Voltage:	700 mV
Pd - Power Dissipation:	350 mW
Gain Bandwidth Product fT:	360 MHz
Minimum Operating Temperature:	- 65 C
Maximum Operating Temperature:	+ 150 C
Series:	NST807
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Continuous Collector Current:	500 mA
DC Collector/Base Gain hFE Min:	250 at - 100 mA, - 1 V
DC Current Gain hFE Max:	600 at - 100 mA, - 1 V
Product Type:	BJTs - Bipolar Transistors
Factory Pack Quantity:	3000
Subcategory:	Transistors

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Datasheet

NSVT807CMTWFTBG Datasheet

USHTS:: 8541210075
TARIC:: 8541210000
ECCN:: EAR99

NST807 General Purpose PNP Transistors

onsemi NST807 General Purpose PNP Transistors are designed for general-purpose switching and amplifier applications. The onsemi NST807 offers high performance and reliability, making it suitable for use in low-power circuits, signal processing, and general electronic applications. The transistor features a maximum collector-emitter voltage (V_CE) of 40V and a maximum collector current (I_C) of 3A, providing versatility for a range of designs. With its low saturation voltage and fast switching speeds, the NST807 is often chosen for high-efficiency circuits. Additionally, its compact DFN1010-3 package allows for space-efficient designs, making the NST807 an excellent choice for consumer electronics, automotive, and industrial applications. The device is engineered to deliver robust performance, with a well-defined characteristic curve that ensures stability and reliability in various environmental conditions.