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NCD5700DR2G

Name: onsemi NCD5700DR2G
Brand: onsemi
SKU: 863-NCD5700DR2G
Price: 2.65 GBP
Availability: InStock

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Mouser No:

863-NCD5700DR2G

Mfr. No:

NCD5700DR2G

Mfr.:

onsemi

Description:

Gate Drivers HIGH CURRENT IGBT GATE DR

Datasheet:

NCD5700DR2G Datasheet

ECAD Model:

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More Information

Learn more about onsemi NCD5700DR2G

In Stock: 2,576

Stock:: 2,576 Can Dispatch Immediately

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Factory Lead Time:: 24 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+£3.50)

Pricing (GBP)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	£2.65	£2.65
	£2.00	£20.00
	£1.84	£46.00
	£1.65	£165.00
	£1.50	£375.00
	£1.43	£715.00
	£1.39	£1,390.00
Full Reel (Order in multiples of 2500)
	£1.36	£3,400.00

† A MouseReel™ fee of £3.50 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	Gate Drivers
RoHS:
Product:	IGBT, MOSFET Gate Drivers
Mounting Style:	SMD/SMT
Package/Case:	SOIC-16
Number of Drivers:	1 Driver
Number of Outputs:	1 Output
Output Current:	7.8 A
Supply Voltage - Min:	0 V
Supply Voltage - Max:	5 V
Configuration:	Inverting, Non-Inverting
Rise Time:	18 ns
Fall Time:	19 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	NCD5700
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Features:	DESAT Protection, Tight UVLO Thresholds
Maximum Turn-Off Delay Time:	63 ns
Maximum Turn-On Delay Time:	56 ns
Operating Supply Current:	900 uA
Output Voltage:	800 mV, 14.1 V
Pd - Power Dissipation:	900 mW
Product Type:	Gate Drivers
Shutdown:	Shutdown
Factory Pack Quantity:	2500
Subcategory:	PMIC - Power Management ICs
Technology:	Si

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Filter Document:

Datasheet

NCD5700DR2G Datasheet

Errata

Datasheet update for NCV5700/NCD5700/01 series, DESAT charge current (PDF)

PCN

CNHTS:: 8542399000
CAHTS:: 8542310000
USHTS:: 8542390090
MXHTS:: 8542310302
ECCN:: EAR99

Solutions for Energy Infrastructure

onsemi Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. onsemi offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.

Pairing Gate Drivers with EliteSiC MOSFETs

Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.

NCD5700 and NCD5701 IGBT Gate Drivers

onsemi NCD5700 and NCD5701 Insulated-Gate Bipolar Transistor (IGBT) Gate Drivers are high-current, high-performance devices for high power applications, such as solar inverters, motor control, and Uninterruptable Power Supplies (UPSs). These Gate Drivers are highly-integrated, offering a cost-effective solution by eliminating many external components. Device protection features of the NCD5700 and NCD5701 Gate Drivers include accurate Under-Voltage Lockout (UVLO), Desaturation Protection (DESAT), and Active Low FAULT output.