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SIR582DP-T1-RE3

Name: Vishay SIR582DP-T1-RE3
Brand: Vishay Semiconductors
SKU: 625-SIR582DP-T1-RE3
Price: 1.8 GBP
Availability: InStock

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Mouser No:

625-SIR582DP-T1-RE3

Mfr. No:

SIR582DP-T1-RE3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs PPAKSO8 N-CH 80V 28.9A

Datasheet:

SIR582DP-T1-RE3 Datasheet

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In Stock: 8,265

Stock:: 8,265 Can Dispatch Immediately

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Factory Lead Time:: 5 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+£3.50)

Pricing (GBP)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	£1.80	£1.80
	£1.15	£11.50
	£0.788	£78.80
	£0.63	£315.00
	£0.599	£599.00
Full Reel (Order in multiples of 3000)
	£0.544	£1,632.00

† A MouseReel™ fee of £3.50 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK SO-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	84.1 A
Rds On - Drain-Source Resistance:	3.2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	44.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	92.5 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Single
Fall Time:	12 ns
Forward Transconductance - Min:	42 S
Product Type:	MOSFETs
Rise Time:	10 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	28 ns
Typical Turn-On Delay Time:	18 ns

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Datasheet

SIR582DP-T1-RE3 Datasheet

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
MXHTS:: 8541299900
ECCN:: EAR99

TrenchFET® Gen V Power MOSFETs with VDS

Vishay / Siliconix TrenchFET^® Gen V Power MOSFETs increase power conversion efficiency with a very low R_DS x Q_g figure-of-merit (FOM). The Gen V Power MOSFETs have 80V, 100V, and 150V drain-source breakdown voltage options. The Gen V Power MOSFETs are available in a PowerPAK^® 1212-8SH or PowerPAK SO-8 single package.