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SSM6L09FUTE85LF

Name: Toshiba SSM6L09FUTE85LF
Brand: Toshiba
SKU: 757-SSM6L09FUTE85LF
Price: 0.35 GBP
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

757-SSM6L09FUTE85LF

Mfr. No:

SSM6L09FUTE85LF

Mfr.:

Toshiba

Description:

MOSFETs N-Ch P-Ch Sg FET 0.4A -0.2A 30V -30V

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

SSM6L09FUTE85LF Datasheet

ECAD Model:

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More Information

Learn more about Toshiba SSM6L09FUTE85LF

In Stock: 691,910

Stock:: 691,910 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

£-.--

Ext. Price:

£-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+£3.50)

Pricing (GBP)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	£0.353	£0.35
	£0.221	£2.21
	£0.14	£14.00
	£0.105	£52.50
	£0.093	£93.00
Full Reel (Order in multiples of 3000)
	£0.07	£210.00
	£0.069	£414.00
	£0.059	£531.00

† A MouseReel™ fee of £3.50 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Possible Replacement

Mfr.:

Toshiba

Mfr. No:

SSM6L40TU,LF

Description:

MOSFETs LowON Res MOSFET ID=1.6A VDSS=30V

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-363-6
Transistor Polarity:	N-Channel, P-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	400 mA, 200 mA
Rds On - Drain-Source Resistance:	4 Ohms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.8 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	300 mW
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Dual
Product Type:	MOSFETs
Series:	SSM6L09
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time:	68 ns, 85 ns
Typical Turn-On Delay Time:	72 ns, 85 ns
Unit Weight:	7.500 mg

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CNHTS:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
KRHTS:: 8541219000
TARIC:: 8541210000
MXHTS:: 8541210100
ECCN:: EAR99

π-MOS VI MOSFETs

Toshiba π-MOS VI MOSFETs are Low Voltage Gate Drive devices offered in both P-channel and N-channel polarity and in single- and dual-channel variants. These devices provide a high drain current rating, low capacitance, low on-resistance, and fast switching. The π-MOS VI MOSFETs drive a 2.5V minimum to 20V maximum gate voltage. Toshiba π-MOS VI MOSFETs are offered in CST3-3, ES6-6, SOT-323-3, SOT-346-3, SOT-353-5, SOT-363-6, SOT-416-3, SOT-553-5, SOT-723-3, SOT-883-3, and TO-263MOD-3 package types for design flexibility. These small surface-mounted packages are ideal for high-density applications.