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CSD19533KCS

Name: Texas Instruments CSD19533KCS
Brand: Texas Instruments
SKU: 595-CSD19533KCS
Price: 1.84 GBP
Availability: OutOfStock

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Mouser No:

595-CSD19533KCS

Mfr. No:

CSD19533KCS

Mfr.:

Texas Instruments

Description:

MOSFETs 100V 8.7mOhm N-CH Pw r MOSFET

Datasheet:

CSD19533KCS Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments CSD19533KCS

Availability

Stock:: 0

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On Order:: 2,058

Expected 09/03/2026
Factory Lead Time:: 12

Weeks Estimated factory production time for quantities greater than shown.

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Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£1.84	£1.84
	£0.925	£9.25
	£0.826	£82.60
	£0.665	£332.50
	£0.568	£568.00
	£0.539	£2,695.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	10.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.8 V
Qg - Gate Charge:	27 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	188 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Tube
Brand:	Texas Instruments
Configuration:	Single
Fall Time:	2 ns
Forward Transconductance - Min:	115 S
Product Type:	MOSFETs
Rise Time:	5 ns
Series:	CSD19533KCS
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	12 ns
Typical Turn-On Delay Time:	7 ns
Unit Weight:	2 g

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Datasheet

CSD19533KCS Datasheet

Images

PCN

Qualification of GTBF as Additional Assembly/Test Site for Select Devices (PDF)

SPICE Models

CSD19533KCS PSpice Model (Rev. B)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
TARIC:: 8542399000
MXHTS:: 8542399901
ECCN:: EAR99

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.