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CSD18537NKCS

Name: Texas Instruments CSD18537NKCS
Brand: Texas Instruments
SKU: 595-CSD18537NKCS
Price: 1.27 GBP
Availability: InStock

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Mouser No:

595-CSD18537NKCS

Mfr. No:

CSD18537NKCS

Mfr.:

Texas Instruments

Description:

MOSFETs 60V N-Channel NexFET Pwr MOSFET

Datasheet:

CSD18537NKCS Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments CSD18537NKCS

In Stock: 10

Stock:: 10

Can Dispatch Immediately

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On Order:: 2,890

Expected 26/02/2026
Factory Lead Time:: 12

Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£1.27	£1.27
	£0.608	£6.08
	£0.543	£54.30
	£0.428	£214.00
	£0.36	£360.00
	£0.328	£1,640.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	56 A
Rds On - Drain-Source Resistance:	14 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.6 V
Qg - Gate Charge:	14 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	94 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Tube
Brand:	Texas Instruments
Configuration:	Single
Fall Time:	3.9 ns
Forward Transconductance - Min:	100 S
Product Type:	MOSFETs
Rise Time:	3.2 ns
Series:	CSD18537NKCS
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	12.6 ns
Typical Turn-On Delay Time:	4.5 ns
Unit Weight:	2 g

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Datasheet

CSD18537NKCS Datasheet

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PCN

Qualification of GTBF as Additional Assembly/Test Site for Select Devices (PDF)

SPICE Models

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.