STL100N8F7

STMicroelectronics
511-STL100N8F7
STL100N8F7

Mfr.:

Description:
MOSFETs N-channel 80 V, 5.2 mOhm typ., 100 A STripFET F7 Power MOSFET in a PowerFLAT 5x6

ECAD Model:
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In Stock: 7,245

Stock:
7,245 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (GBP)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
£2.17 £2.17
£1.43 £14.30
£0.995 £99.50
£0.826 £413.00
£0.803 £803.00
Full Reel (Order in multiples of 3000)
£0.698 £2,094.00
† A MouseReel™ fee of £3.50 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
PowerFLAT-5x6-8
N-Channel
1 Channel
80 V
100 A
6.1 mOhms
- 20 V, 20 V
2.5 V
46.8 nC
- 55 C
+ 175 C
120 W
Enhancement
STripFET
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Configuration: Single
Fall Time: 32 ns
Product Type: MOSFETs
Rise Time: 95 ns
Series: STL100N8F7
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 60 ns
Typical Turn-On Delay Time: 49 ns
Unit Weight: 76 mg
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Attributes selected: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

STripFET Power MOSFETs

STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET technology with a new gate structure. The resulting STripFET Power MOSFET exhibits the high current and low RDS(on) required by automotive and industrial switching applications such as motor control, uninterruptible power supplies (UPS), DC/DC converters, induction heater vaporizers, and solar. STMicroelectronics STripFET Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.