STGW8M120DF3

STMicroelectronics
511-STGW8M120DF3
STGW8M120DF3

Mfr.:

Description:
IGBTs Trench gate field-stop IGBT, M series 1200 V, 8 A low loss

ECAD Model:
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In Stock: 344

Stock:
344 Can Dispatch Immediately
Factory Lead Time:
14 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:

Pricing (GBP)

Qty. Unit Price
Ext. Price
£3.50 £3.50
£2.31 £23.10
£1.81 £181.00
£1.61 £966.00
£1.37 £1,644.00
£1.29 £3,870.00

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
TO-247-3
Through Hole
Single
1.2 kV
1.85 V
- 20 V, 20 V
16 A
167 W
- 55 C
+ 175 C
M
Tube
Brand: STMicroelectronics
Gate-Emitter Leakage Current: 250 uA
Product Type: IGBT Transistors
Factory Pack Quantity: 600
Subcategory: IGBTs
Unit Weight: 6 g
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Attributes selected: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.