BSM300C12P3E201

ROHM Semiconductor
755-BSM300C12P3E201
BSM300C12P3E201

Mfr.:

Description:
MOSFET Modules 1200V, 300A, Boost Chopper, Full SiC-Power Module with Trench MOSFET

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 4

Stock:
4 Can Dispatch Immediately
Factory Lead Time:
27 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:
This Product Ships FREE

Pricing (GBP)

Qty. Unit Price
Ext. Price
£488.39 £488.39

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: MOSFET Modules
RoHS:  
SiC
Screw Mount
Module
N-Channel
1 Channel
1.2 kV
300 A
- 6 V, + 22 V
5.6 V
- 40 C
+ 150 C
1.36 kW
Bulk
Brand: ROHM Semiconductor
Configuration: Single
Fall Time: 40 ns
Height: 15.4 mm
If - Forward Current: 300 A
Length: 152 mm
Product Type: MOSFET Modules
Rise Time: 35 ns
Factory Pack Quantity: 4
Subcategory: Discrete and Power Modules
Type: SiC Power Module
Typical Turn-Off Delay Time: 155 ns
Typical Turn-On Delay Time: 40 ns
Vf - Forward Voltage: 1.6 V
Vr - Reverse Voltage: 1.2 kV
Width: 62 mm
Unit Weight: 615.801 g
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

This functionality requires JavaScript to be enabled.

CNHTS:
8504409190
USHTS:
8541590080
ECCN:
EAR99

SiC Power Modules

ROHM Semiconductor SiC power modules are half-bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These ROHM modules support high-frequency operation through reduced switching loss. The optimized design reduces stray inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.