BM2P10B1J-Z

ROHM Semiconductor
755-BM2P10B1J-Z
BM2P10B1J-Z

Mfr.:

Description:
AC/DC Converters Built-in Switching MOSFET PWM-type DC/DC Converter IC

ECAD Model:
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In Stock: 3,998

Stock:
3,998 Can Dispatch Immediately
Factory Lead Time:
19 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:

Pricing (GBP)

Qty. Unit Price
Ext. Price
£2.50 £2.50
£1.89 £18.90
£1.25 £31.25
£1.17 £117.00
£0.952 £476.00
£0.882 £882.00
£0.859 £3,436.00

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: AC/DC Converters
RoHS:  
Through Hole
DIP-7
35 W
8.9 V
26 V
Flyback
Si
100 kHz
90 %
900 uA
- 40 C
+ 105 C
Tube
Brand: ROHM Semiconductor
Development Kit: BM2P10B1J-EVK-001
Isolation: Isolated
Number of Outputs: 1 Output
Product: AC/DC Converters
Product Type: AC/DC Converters
Factory Pack Quantity: 2000
Subcategory: PMIC - Power Management ICs
Type: PWM Type DC/DC Converter IC
Part # Aliases: BM2P10B1J
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CAHTS:
8542310000
USHTS:
8542310030
ECCN:
EAR99

BM2P10xJ-Z PWM-Type DC/DC Converter ICs

ROHM Semiconductor BM2P10xJ-Z PWM-Type DC/DC Converter ICs are optimized for isolated AC-DC power supply applications in environments requiring high voltage tolerance and compact design. Featuring an integrated 730V switching MOSFET, these ICs are capable of operating directly from high-voltage AC mains, making them ideal for use in home appliances, industrial control systems, and general-purpose auxiliary power supplies. The ROHM Semiconductor BM2P10xJ-Z series supports efficient power conversion with frequency hopping PWM control to reduce EMI, and includes essential protection features such as overcurrent, overvoltage, overload, and thermal shutdown. With built-in startup circuitry, soft-start functionality, and low standby power consumption, the BM2P10xJ-Z series enables simplified, reliable, and energy-efficient power supply designs in space-constrained applications.

N-Channel SiC Power MOSFETs

ROHM Semiconductor N-Channel Silicon Carbide (SiC) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. Their low ON resistance and compact chip size ensure low capacitance and gate charge. These ROHM SiC Power MOSFETs exhibit minimal ON-resistance increases and provides greater package miniaturization. This provides more energy savings than standard Si devices, in which the ON-resistance can more than double with increased temperature.