It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

ISC130N20NM6ATMA1

Name: Infineon ISC130N20NM6ATMA1
Brand: Infineon Technologies
SKU: 726-ISC130N20NM6ATMA
Price: 3.57 GBP
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

726-ISC130N20NM6ATMA

Mfr. No:

ISC130N20NM6ATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IFX FET >150 - 400V

Lifecycle:

New At Mouser

Datasheet:

ISC130N20NM6ATMA1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies ISC130N20NM6ATMA1

In Stock: 7,136

Stock:: 7,136 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 52 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

£-.--

Ext. Price:

£-.--

Est. Tariff:

Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£3.57	£3.57
	£3.13	£31.30
	£2.27	£227.00
	£2.07	£1,035.00
Full Reel (Order in multiples of 5000)
	£1.96	£9,800.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TSON-8-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	88 A
Rds On - Drain-Source Resistance:	13 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	39 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	242 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	9 ns
Forward Transconductance - Min:	17 S
Product Type:	MOSFETs
Rise Time:	15 ns
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	20 ns
Typical Turn-On Delay Time:	10 ns
Part # Aliases:	ISC130N20NM6 SP005987558

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

ISC130N20NM6ATMA1 Datasheet (PDF)

This functionality requires JavaScript to be enabled.

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

OptiMOS™ 6 Power MOSFETs

Infineon Technologies OptiMOS™ 6 Power MOSFETs offer next generation, cutting-edge innovation and best-in-class performance. The OptiMOS 6 family utilises thin wafer technology that enables significant performance benefits. Compared to alternative products, the OptiMOS 6 Power MOSFETs have a reduced R_DS(ON) of 30% and are optimised for synchronous rectification.

OptiMOS™ 6 200V Power MOSFETs

Infineon Technologies OptiMOS™ 6 200V Power MOSFETs are N-channel normal level MOSFETs available in PG-TO263-3, PG-TO220-3, and PG-HDSOP-16 packages. These MOSFETs feature excellent gate charge x R_DS(on) product (FOM), very low reverse recovery charge (Q_rr), and low on‑resistance R_DS(on). The OptiMOS™ 6 200V MOSFETs operate at 175°C temperature. These MOSFETs are halogen‑free according to IEC61249‑2‑21 and Moisture Sensitivity Level (MSL 1) classified according to J‑STD-020 standards. The OptiMOS™ 6 200V MOSFETs are ideal for renewables, motor control, audio amplifiers, and industrial applications.