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IMDQ75R050M2HXTMA1

Name: Infineon IMDQ75R050M2HXTMA1
Brand: Infineon Technologies
SKU: 726-IMDQ75R050M2HXTM
Price: 5.6 GBP
Availability: InStock

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Mouser No:

726-IMDQ75R050M2HXTM

Mfr. No:

IMDQ75R050M2HXTMA1

Mfr.:

Infineon Technologies

Description:

SiC MOSFETs SILICON CARBIDE MOSFET

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IMDQ75R050M2HXTMA1 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies IMDQ75R050M2HXTMA1

In Stock: 140

Stock:: 140 Can Dispatch Immediately

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Factory Lead Time:: 53 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£5.60	£5.60
	£3.95	£39.50
	£3.29	£329.00
	£2.89	£1,445.00
Full Reel (Order in multiples of 750)
	£2.60	£1,950.00
4,500	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	PG-HDSOP-22
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	750 V
Id - Continuous Drain Current:	36 A
Rds On - Drain-Source Resistance:	65 mhms
Vgs - Gate-Source Voltage:	- 7 V, + 23 V
Vgs th - Gate-Source Threshold Voltage:	5.6 V
Qg - Gate Charge:	24 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	148 W
Channel Mode:	Enhancement
Tradename:	CoolSiC
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	5 ns
Forward Transconductance - Min:	11 S
Packaging:	Reel
Packaging:	Cut Tape
Product:	SiC MOSFET
Product Type:	SiC MOSFETS
Rise Time:	6 ns
Series:	CoolSiC G2
Factory Pack Quantity:	750
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	13 ns
Typical Turn-On Delay Time:	7 ns
Part # Aliases:	IMDQ75R050M2H SP006089229

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Datasheet

IMDQ75R050M2HXTMA1 Datasheet (PDF)

ECCN:: EAR99

CoolSiC™ 750V G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ 750V G2 Silicon Carbide MOSFETs are designed to offer high efficiency, robustness against parasitic turn-on for unipolar gate driving, and reliability. These MOSFETs offer superior performance in Totem Pole, ANPC, Vienna rectifier, and FCC hard-switching topologies. The reduction in Output Capacitance (Coss) enables the MOSFETs to operate at higher switching frequencies in Cycloconverter, CLLC, DAB, and LLC soft switching topologies. The CoolSiC™ 750V G2 MOSFETs feature up to 78mΩ maximum drain-source on-resistance and switching losses through improved gate control. These MOSFETs are automotive and industrial qualified. Typical applications include EV charging infrastructure, telecom, circuit breakers, solid state relays, solar PV inverters, and HV‑LV DC-DC converters.