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IKB30N65EH5ATMA1

Name: Infineon IKB30N65EH5ATMA1
Brand: Infineon Technologies
SKU: 726-IKB30N65EH5ATMA1
Price: 2.78 GBP
Availability: InStock

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Mouser No:

726-IKB30N65EH5ATMA1

Mfr. No:

IKB30N65EH5ATMA1

Mfr.:

Infineon Technologies

Description:

IGBTs INDUSTRY

Datasheet:

IKB30N65EH5ATMA1 Datasheet (PDF)

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In Stock: 1,922

Stock:: 1,922 Can Dispatch Immediately

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Factory Lead Time:: 19 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£2.78	£2.78
	£1.82	£18.20
	£1.27	£127.00
	£1.13	£565.00
Full Reel (Order in multiples of 1000)
	£0.96	£960.00
	£0.952	£1,904.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	IGBTs
RoHS:
REACH - SVHC:
Technology:	Si
Package/Case:	D2PAK-3 (TO-263-3)
Mounting Style:	SMD/SMT
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.65 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	55 A
Pd - Power Dissipation:	188 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Series:	Trenchstop IGBT5
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Continuous Collector Current Ic Max:	55 A
Gate-Emitter Leakage Current:	100 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	1000
Subcategory:	IGBTs
Tradename:	TRENCHSTOP
Part # Aliases:	IKB30N65EH5 SP001502648
Unit Weight:	1.560 g

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Datasheet

IKB30N65EH5ATMA1 Datasheet (PDF)

Application Notes

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Technical Resources

Matching Circuit Topologies and Power Semiconductors for Energy Storage in Photovoltaic Systems (PDF)

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

TRENCHSTOP™ 5 IGBTs

Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.