IXYA20N65C3D1

IXYS
747-IXYA20N65C3D1
IXYA20N65C3D1

Mfr.:

Description:
IGBTs Disc IGBT XPT-GenX3 TO-263D2

ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
Minimum: 300   Multiples: 50
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:
This Product Ships FREE

Pricing (GBP)

Qty. Unit Price
Ext. Price
£3.23 £969.00
£3.08 £1,540.00
£2.72 £2,720.00

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: IGBTs
Tube
- 55 C
+ 175 C
Brand: IXYS
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 2.27 V
Configuration: Single
Continuous Collector Current at 25 C: 50 A
Continuous Collector Current Ic Max: 105 A
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: - 20 V, 20 V
Mounting Style: SMD/SMT
Package/Case: D2PAK-3 (TO-263-3)
Pd - Power Dissipation: 200 W
Product Type: IGBT Transistors
Factory Pack Quantity: 50
Subcategory: IGBTs
Technology: Si
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USHTS:
8541290095
TARIC:
8541290000
ECCN:
EAR99

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