IXGN50N120C3H1

IXYS
747-IXGN50N120C3H1
IXGN50N120C3H1

Mfr.:

Description:
IGBT Modules High Frequency Range >40khz CIGBT w/Diode

Datasheet:
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Learn more about IXYS IXGN50N120C3H1

Availability

Stock:
Non-Stocked
Factory Lead Time:
32 Weeks Estimated factory production time.
Long lead time reported on this product.
Minimum: 300   Multiples: 10
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:
This Product Ships FREE

Pricing (GBP)

Qty. Unit Price
Ext. Price
£19.47 £5,841.00

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: IGBT Modules
RoHS:  
IGBT Modules
1.2 kV
95 A
100 nA
460 W
SOT-227B-4
- 55 C
+ 150 C
Tube
Brand: IXYS
Maximum Gate Emitter Voltage: 20 V
Mounting Style: Screw Mount
Product Type: IGBT Modules
Series: IXGN50N120
Factory Pack Quantity: 10
Subcategory: IGBTs
Technology: Si
Tradename: GenX3
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Attributes selected: 0

Datasheet

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

GenX3™ Insulated-Gate Bipolar Transistors (IGBTs)

IXYS GenX3™ Insulated-Gate Bipolar Transistors (IGBTs) are PT (Punch Through) manufactured using a robust HDMOS IGBT process. The 600V GenX3 components are optimized for high-current applications requiring soft-switching frequencies upwards of 200kHz and hard-switching frequencies of 40kHz. The 600V IGBTs provide higher surge current capabilities, a lower saturation voltage, and lower energy losses offering designers a viable option for switching applications at the 600V range. The 1200V GenX3 IGBTs offer lower saturation voltages, lower switching losses, and higher surge current capabilities. The 1200V models are aimed at the high-voltage power conversion market.

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Littelfuse IGBT Modules offer a comprehensive portfolio. The Littelfuse IGBT Modules range from phase legs to six-packs and everything in between. This makes Littelfuse able to accommodate a wide array of topology and package requirements.

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