IXFN60N80P

IXYS
747-IXFN60N80P
IXFN60N80P

Mfr.:

Description:
MOSFET Modules DIODE Id54 BVdass800

Datasheet:
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Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
300
Expected 05/10/2026
310
Expected 14/10/2026
Factory Lead Time:
27
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:
This Product Ships FREE

Pricing (GBP)

Qty. Unit Price
Ext. Price
£38.26 £38.26
£32.63 £326.30
£28.55 £2,855.00

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: MOSFET Modules
RoHS:  
Si
Screw Mount
SOT-227-4
N-Channel
1 Channel
800 V
53 A
140 mOhms
- 30 V, + 30 V
- 55 C
+ 150 C
1.04 mW
IXFN60N80
Tube
Brand: IXYS
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: KR
Fall Time: 26 ns
Height: 9.6 mm
Length: 38.23 mm
Product Type: MOSFET Modules
Rise Time: 29 ns
Factory Pack Quantity: 10
Subcategory: Discrete and Power Modules
Tradename: HiPerFET
Type: HiperFET
Typical Turn-Off Delay Time: 110 ns
Typical Turn-On Delay Time: 36 ns
Width: 25.42 mm
Unit Weight: 30 g
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Attributes selected: 0

Datasheet

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CNHTS:
8504901900
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

Polar HiPerFET Power MOSFETs

IXYS Polar™ HiPerFETs Power MOSFETs combine the strengths of the Polar Standard family with a faster body diode. The faster body diode's reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of MOSFETs provides the lowest RDS(on), low RthJC, low Qg, and enhanced dv/dt capability.

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