MMFTP2319

Diotec Semiconductor
637-MMFTP2319
MMFTP2319

Mfr.:

Description:
MOSFETs MOSFET, SOT-23, -40V, -4.2A, 150C, P

ECAD Model:
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In Stock: 3,733

Stock:
3,733 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:

Pricing (GBP)

Qty. Unit Price
Ext. Price
£0.458 £0.46
£0.324 £3.24
£0.226 £22.60
£0.198 £99.00
£0.184 £184.00
Full Reel (Order in multiples of 3000)
£0.136 £408.00
£0.101 £909.00
£0.099 £2,376.00
£0.075 £3,375.00

Product Attribute Attribute Value Select Attribute
Diotec Semiconductor
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
SOT-23-3
P-Channel
1 Channel
40 V
4.2 A
80 mOhms
- 20 V, 20 V
3 V
20 nC
- 55 C
+ 150 C
750 mW
Enhancement
Reel
Cut Tape
Brand: Diotec Semiconductor
Configuration: Single
Fall Time: 4 ns
Product Type: MOSFETs
Rise Time: 28 ns
Series: MMFTN/P
Factory Pack Quantity: 3000
Subcategory: Transistors
Typical Turn-Off Delay Time: 19 ns
Typical Turn-On Delay Time: 15 ns
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Attributes selected: 0

CNHTS:
8541210000
CAHTS:
8541210000
USHTS:
8541210095
JPHTS:
854121000
TARIC:
8541210000
MXHTS:
8541210100
ECCN:
EAR99

Advanced Trench Technology Power MOSFETs

Diotec Semiconductors Advanced Trench Technology Power MOSFETs feature low on-state resistance and fast switching time. These MOSFETs components are available in standard commercial/industrial grading. The power MOSFETs are offered as N, P, or dual N+P channel types in single, dual, and H bridge configurations. These MOSFETs offer a 100mA to 280A current range and a 20V to 250V voltage range.

MMFTP2319 P-Channel Enhancement Mode FET

Diotec Semiconductor MMFTP2319 P-Channel Enhancement Mode FET offers fast switching times in a SOT-23/TO-236 package. The MMFTP2319 FET features a 40V maximum drain-source voltage, 750mW maximum power dissipation, and a 4.2A maximum drain current in a -50°C to +150°C junction temperature range. The Diotec Semiconductor MMFTP2319 P-Channel Enhancement Mode FET is ideal for signal processing, battery management, drivers, and logic-level converters.