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Mfr.	Mfr. No:	Qty	Ext Total

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IPP029N06NAKSA1

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See Product Specifications

Mouser No:

726-IPP029N06NAKSA1

Mfr. No:

IPP029N06NAKSA1

Mfr.:

Infineon Technologies

Description:

MOSFETs N-Ch 60V 100A TO220-3

Lifecycle:

Part Number Change:

Part number revision only. The manufacturer has changed this part number. This is the previous part number.

Datasheet:

IPP029N06NAKSA1 Datasheet (PDF)

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	2.7 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.1 V
Qg - Gate Charge:	66 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	136 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Tube
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	8 ns
Forward Transconductance - Min:	80 S
Product Type:	MOSFETs
Rise Time:	15 ns
Series:	OptiMOS 5
Factory Pack Quantity:	500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	30 ns
Typical Turn-On Delay Time:	17 ns
Part # Aliases:	IPP029N06N SP000917404
Unit Weight:	2 g

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Filter Document:

Datasheet

IPP029N06NAKSA1 Datasheet (PDF)

Models

Product Catalogs

SPICE Models

Simulation Model OptiMOS™ Power MOSFET PSpice 60V N-Channel (Zip)

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Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: Malaysia
Assembly Country of Origin:: Malaysia
Country of Diffusion:: Austria

The country is subject to change at the time of shipment.

FEATURED PRODUCTS

INFINEON

OptiMOS™ 7 100V Automotive Power MOSFETs

Advanced N‑channel devices engineered for high-efficiency power switching.

OptiMOS™ 6 60V Power MOSFETs

Delivers superior performance to OptiMOS 5 via robust power MOSFET technology.

N-Channel OptiMOS™ 7 25V Power MOSFETs

Application-optimized performance, enabling peak performance for data centers, servers, & AI.

OptiMOS™ 8 Power MOSFETs

These are N-channel, normal level 80V or 100V MOSFETs with very low on-resistance [R_DS(ON)].

N-Channel OptiMOS™ 7 80V Power MOSFETs

80V, N-channel, normal level devices with superior thermal resistance in a PG‑TDSON‑8 package.

Availability

Stock:: Non-Stocked

An unexpected error occurred. Please try again later.
Factory Lead Time:: 8 Weeks Estimated factory production time.

Enter Quantity:

Minimum: 500 Multiples: 500

Unit Price:

£-.--

Ext. Price:

£-.--

Est. Tariff:

This Product Ships FREE

Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£0.614	£307.00
	£0.55	£550.00
	£0.514	£1,285.00
	£0.496	£2,480.00

Possible Replacement

Infineon Technologies IPP029N06NXKSA1

Mfr.:

Infineon Technologies

Mfr. No:

IPP029N06NXKSA1

Description:

MOSFETs OptiMOS Power-Transistor,60V

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